Micro LED Breakthrough, Lattice Power Launches Silicon Substrate InGaN Based Triple Color Epitaxy

Recently, Lattice Power released the results of the InGaN based red, green, and blue series of three primary colors Micro LED epitaxial technology on a 12 inch silicon substrate.

Lattice Power Display of 12 inch Silicon Substrate Red, Green, and Blue Light InGaN Based LED Epitaxial Wafer Quick Check EL Illumination Effect

It is reported that Lattice Power was founded in 2006 and is a full industry chain IDM semiconductor optoelectronic product provider with underlying chip core technology. It provides high-quality LED (epitaxial, chip, packaging, and module) light source and sensing sensor products and solutions to global customers.

Based on nearly 20 years of silicon substrate GaN based LED technology and industrial accumulation, Crystal Energy Optoelectronics launched the 8-inch silicon substrate InGaN red light epitaxial technology as early as 2020. Currently, it is still continuously researching and developing to improve the InGaN red light efficiency.
In September 2021, Crystal Energy Optoelectronics successfully prepared a silicon substrate InGaN red, green, and blue micro LED array with a pixel spacing of 25 microns and a pixel density of 1000PPI. At present, the important technical indicator of pixel spacing has been reduced to 8 micrometers.

In 2022, Crystal Energy Optoelectronics broke through the key technology of InGaN based tricolor Micro LED epitaxy on 8-inch silicon substrates and successfully prepared 5-micron pitch Micro LED tricolor arrays, actively expanding into emerging markets.

Lattice Power stated that, driven by cost and yield, upgrading to large-sized wafers has become a definite development trend in the industrialization of Micro LED, which is also in line with the company's continuous innovation pursuit in the field of GaN based LED technology on silicon substrates. Large size wafers can not only significantly improve the utilization rate of Micro LED epitaxial wafers and CMOS backplanes, but also facilitate compatibility with mature silicon IC devices and processes, improve Micro LED process efficiency, reduce costs, and accelerate the commercial process of Micro LED technology.

According to Dr. Fu Yi, Vice President of Lattice Power, the epitaxial growth of Micro LED on large-sized silicon substrates poses more stringent challenges to the development of key technologies such as GaN crystal quality, epitaxial warping, external quantum efficiency, photoelectric consistency, and InGaN red MQW.
The release of the industrialization and epitaxial technology of InGaN based red, green, and blue micro LEDs on a 12 inch silicon substrate indicates that Jingneng Optoelectronics has taken advantage of its innovative and iterative capabilities in silicon substrate GaN based LED technology, and has preliminarily overcome the key technical challenges mentioned above, paving the way for the optimization and improvement of subsequent technologies and processes.

Lattice Power further stated that Apple's launch of Vision Pro this year has brought higher popularity to the global AR/VR industry, but Vision Pro will not be the end point. People's expectations for lightweight and efficient wearable display technology are becoming increasingly enthusiastic, which will greatly promote innovation and application of various micro display technologies.

The Micro LED process route based on large-sized silicon substrates has great potential in terms of cost, yield, and light efficiency, and is expected to become the mainstream industrialization route for micrometer level Micro LEDs. The breakthrough in the three primary colors Micro LED epitaxial technology of 12 inch silicon substrates will effectively promote the development of Micro LED display technology in this direction.